
The CR Micro CS2R60A4RP-G is a 600 V 2 A N-channel MOSFET in a TO-252 package, built on the Planar process. On-resistance is 5000 mΩ typical and 5500 mΩ maximum at a 10 V gate drive; gate charge is 10.6 nC with 344 pF input capacitance; threshold voltage spans 3.5 to 4.5 V.
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 2 A |
| Rds(on) @ VGS = 10 V, typ. | 5000 mΩ |
| Rds(on) @ VGS = 10 V, max. | 5500 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3.5 – 4.5 V |
| Total Gate Charge (Qg) | 10.6 nC |
| Input Capacitance (Ciss) | 344 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-252 |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRJD290N60G4EM | 600V | 10A | 275 | 310 | 12 | 600 | TO-252 |
| CRJD360N60G2E | 600V | 9A | 315 | 360 | 17 | 500 | TO-252 |
| CRJD500N60G2BF | 600V | 8A | 420 | 500 | 15.5 | 360 | TO-252 |
| CRJD600N60G2E | 600V | 7A | 530 | 600 | 10.8 | 317 | TO-252 |
| CS6N60A4D | 600V | 6A | 1000 | 1300 | 25 | 950 | TO-252 |
| CS7N60A4R | 600V | 7A | 1000 | 1300 | 24 | 1121 | TO-252 |
| CS7N60A4RC-G | 600V | 7A | 1000 | 1300 | 25.3 | 1111 | TO-252 |
| CS6N60A4H | 600V | 6A | 1400 | 1700 | 19.5 | 720 | TO-252 |
| CS6R60A4RDP-G | 600V | 6A | 1600 | 2000 | 20 | 864 | TO-252 |
| CS4N60A4R | 600V | 4A | 2100 | 2500 | 14.5 | 590 | TO-252 |
| CS4N60A4RC-G | 600V | 4A | 2100 | 2500 | 14.7 | 572 | TO-252 |
| CS4R60A4RDP-G | 600V | 4A | 2500 | 3000 | 15.3 | 608 | TO-252 |
| CS2N60A4R | 600V | 2A | 3600 | 4500 | 9.5 | 335 | TO-252 |
| CS2N60A4RZ-G | 600V | 2A | 3600 | 4500 | 9.5 | 335 | TO-252 |
| CS2R60A4RP-G | 600V | 2A | 5000 | 5500 | 10.6 | 344 | TO-252 |
| CS1N60A4H | 600V | 0.8A | 11000 | 15000 | 4 | 92 | TO-252 |
16 part numbers share the same 600 / TO-252 / N rating — sorted by rds(on) typ.
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Is the CS2R60A4RP-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 600 V.
Can the CS2R60A4RP-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS2R60A4RP-G?
VGS(th) is specified between 3.5 and 4.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS2R60A4RP-G need?
Qg is 10.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS2R60A4RP-G come in?
TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 16 part numbers in this rating group?
All 16 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd