CS30N50ANR CR Micro 500V 30A N-Channel MOSFET TO-3PN
CS30N50ANR CR Micro 500V 30A N-Channel MOSFET TO-3PN

CS30N50ANR CR Micro 500V 30A N-Channel MOSFET TO-3PN

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pCS30N50ANR CR Micro 500V 30A N-Channel MOSFET TO-3PN — Rds(on) 90 mΩ typ, Qg 153 nC./p
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    At a Glance
    • 500 V / 30 A continuous drain current, TO-3PN package
    • Rds(on) 90 mΩ typ, 120 mΩ max at VGS = 10 V
    • Qg 153 nC and Ciss 7858 pF
    • N-channel, Planar process

    The CR Micro CS30N50ANR is a 500 V 30 A N-channel MOSFET in a TO-3PN package, built on the Planar process. On-resistance is 90 mΩ typical and 120 mΩ maximum at a 10 V gate drive; gate charge is 153 nC with 7858 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)500 V
    Continuous Drain Current (ID)30 A
    Rds(on) @ VGS = 10 V, typ.90 mΩ
    Rds(on) @ VGS = 10 V, max.120 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)153 nC
    Input Capacitance (Ciss)7858 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-3PN

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS30N50ANR500V30A901201537858TO-3PN
    CS28N50ANR500V28A150195835070TO-3PN
    CS2837AND500V20A180260964900TO-3PN
    CS25N50ANR500V25A210270643487TO-3PN
    CS20N50ANR500V20A240300522919TO-3PN
    CS2698ANR500V15A300400502400TO-3PN

    6 part numbers share the same 500 / TO-3PN / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS30N50ANR an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 500 V.

    Can the CS30N50ANR be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS30N50ANR?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS30N50ANR need?

    Qg is 153 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS30N50ANR come in?

    TO-3PN. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 6 part numbers in this rating group?

    All 6 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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