CS30N60AKR-G CR Micro 600V 30A N-Channel MOSFET TO-247
CS30N60AKR-G CR Micro 600V 30A N-Channel MOSFET TO-247

CS30N60AKR-G CR Micro 600V 30A N-Channel MOSFET TO-247

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pCS30N60AKR-G CR Micro 600V 30A N-Channel MOSFET TO-247 — Rds(on) 130 mΩ typ, Qg 149 nC./p
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    At a Glance
    • 600 V / 30 A continuous drain current, TO-247 package
    • Rds(on) 130 mΩ typ, 180 mΩ max at VGS = 10 V
    • Qg 149 nC and Ciss 7996 pF
    • N-channel, Planar process

    The CR Micro CS30N60AKR-G is a 600 V 30 A N-channel MOSFET in a TO-247 package, built on the Planar process. On-resistance is 130 mΩ typical and 180 mΩ maximum at a 10 V gate drive; gate charge is 149 nC with 7996 pF input capacitance; threshold voltage spans 2.5 to 4.5 V.

    Key Specifications

    Drain-Source Voltage (VDS)600 V
    Continuous Drain Current (ID)30 A
    Rds(on) @ VGS = 10 V, typ.130 mΩ
    Rds(on) @ VGS = 10 V, max.180 mΩ
    Gate Threshold Voltage (VGS(th))2.5 – 4.5 V
    Total Gate Charge (Qg)149 nC
    Input Capacitance (Ciss)7996 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJQ17N60G4BFZ600V125A141723010650TO-247
    CRJQ17N60G4FZ600V129A14.51726010900TO-247
    CRJQ22N60G4BFZ600V101A18221908500TO-247
    CRJQ22N60G4FZ600V103A18221908900TO-247
    CRJQ29N60G2BF600V84A25292056300TO-247
    CRJQ30N60G2600V83A25302036445TO-247
    CRJQ30N60G4FZ600V74A25301356200TO-247
    CRJQ30N60G2BF600V83A28332005800TO-247
    CRJQ30N60G2F600V83A28331656000TO-247
    CRJQ35N60G4FZ600V58A32381104640TO-247
    CRJQ50N60G4Z600V48A4150833800TO-247
    CRJQ60N60G4FZ600V44A4560783470TO-247
    CRJQ69N60G2600V40A6373792520TO-247
    CRJQ74N60G2BF600V39A7077842200TO-247
    CRJQ74N60G2F600V39A7077652400TO-247
    CS30N60AKR-G600V30A1301801497996TO-247

    16 part numbers share the same 600 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS30N60AKR-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 600 V.

    Can the CS30N60AKR-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS30N60AKR-G?

    VGS(th) is specified between 2.5 and 4.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS30N60AKR-G need?

    Qg is 149 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS30N60AKR-G come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 16 part numbers in this rating group?

    All 16 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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