CS38N30AN CR Micro 300V 38A N-Channel MOSFET TO-3PN
CS38N30AN CR Micro 300V 38A N-Channel MOSFET TO-3PN

CS38N30AN CR Micro 300V 38A N-Channel MOSFET TO-3PN

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pCS38N30AN CR Micro 300V 38A N-Channel MOSFET TO-3PN — Rds(on) 45 mΩ typ, Qg 123 nC./p
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    At a Glance
    • 300 V / 38 A continuous drain current, TO-3PN package
    • Rds(on) 45 mΩ typ, 85 mΩ max at VGS = 10 V
    • Qg 123 nC and Ciss 5900 pF
    • N-channel, Planar process

    The CR Micro CS38N30AN is a 300 V 38 A N-channel MOSFET in a TO-3PN package, built on the Planar process. On-resistance is 45 mΩ typical and 85 mΩ maximum at a 10 V gate drive; gate charge is 123 nC with 5900 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)300 V
    Continuous Drain Current (ID)38 A
    Rds(on) @ VGS = 10 V, typ.45 mΩ
    Rds(on) @ VGS = 10 V, max.85 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)123 nC
    Input Capacitance (Ciss)5900 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-3PN

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS70N30ANR300V70A3642136.28280TO-3PN
    CS38N30AN300V38A45851235900TO-3PN

    2 part numbers share the same 300 / TO-3PN / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Power factor correction, LLC resonant stages, and LED drivers in offline supplies.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS38N30AN an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 300 V.

    Can the CS38N30AN be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS38N30AN?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS38N30AN need?

    Qg is 123 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS38N30AN come in?

    TO-3PN. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 2 part numbers in this rating group?

    All 2 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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