CS3N06AS-G CR Micro 60V 3A N-Channel MOSFET SOT-23
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- 60 V / 3 A continuous drain current, SOT-23 package
- Rds(on) 75 mΩ typ, 105 mΩ max at VGS = 10 V
- Qg 7.8 nC and Ciss 282 pF
- N-channel, Trench process
The CR Micro CS3N06AS-G is a 60 V 3 A N-channel MOSFET in a SOT-23 package, built on the Trench process. On-resistance is 75 mΩ typical and 105 mΩ maximum at a 10 V gate drive; 96 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 7.8 nC with 282 pF input capacitance; threshold voltage spans 0.8 to 2 V.
Key Specifications
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 3 A |
| Rds(on) @ VGS = 10 V, typ. | 75 mΩ |
| Rds(on) @ VGS = 10 V, max. | 105 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 96 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 125 mΩ |
| Gate Threshold Voltage (VGS(th)) | 0.8 – 2 V |
| Total Gate Charge (Qg) | 7.8 nC |
| Input Capacitance (Ciss) | 282 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | SOT-23 |
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS3N06AS-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 60 V.
Can the CS3N06AS-G be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 96 mΩ typical and 125 mΩ maximum.
What is the gate threshold voltage of the CS3N06AS-G?
VGS(th) is specified between 0.8 and 2 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS3N06AS-G need?
Qg is 7.8 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS3N06AS-G come in?
SOT-23. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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