CS3N90FA9RZ-G CR Micro 900V 3A N-Channel MOSFET TO-220F
CS3N90FA9RZ-G CR Micro 900V 3A N-Channel MOSFET TO-220F

CS3N90FA9RZ-G CR Micro 900V 3A N-Channel MOSFET TO-220F

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pCS3N90FA9RZ-G CR Micro 900V 3A N-Channel MOSFET TO-220F — Rds(on) 4800 mΩ typ, Qg 17.4 nC./p
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    At a Glance
    • 900 V / 3 A continuous drain current, TO-220F package
    • Rds(on) 4800 mΩ typ, 5500 mΩ max at VGS = 10 V
    • Qg 17.4 nC and Ciss 561 pF
    • N-channel, Planar process

    The CR Micro CS3N90FA9RZ-G is a 900 V 3 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 4800 mΩ typical and 5500 mΩ maximum at a 10 V gate drive; gate charge is 17.4 nC with 561 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)900 V
    Continuous Drain Current (ID)3 A
    Rds(on) @ VGS = 10 V, typ.4800 mΩ
    Rds(on) @ VGS = 10 V, max.5500 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)17.4 nC
    Input Capacitance (Ciss)561 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS9N90FA9RD-G900V9A900110057.92716TO-220F
    CS6N90FA9R900V6A1850230031.11435TO-220F
    CS5N90FA9R900V5A2200250030.11156TO-220F
    CS4N90FA9HD-G900V4A2600300025.2835TO-220F
    CS3N90FA9R900V3A4800550017.4561TO-220F
    CS3N90FA9RZ-G900V3A4800550017.4561TO-220F

    6 part numbers share the same 900 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    High-voltage offline supplies, active clamp topologies, and single-stage PFC.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS3N90FA9RZ-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 900 V.

    Can the CS3N90FA9RZ-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS3N90FA9RZ-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS3N90FA9RZ-G need?

    Qg is 17.4 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS3N90FA9RZ-G come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 6 part numbers in this rating group?

    All 6 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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