CS40N25FA9R-G CR Micro 250V 40A N-Channel MOSFET TO-220F
CS40N25FA9R-G CR Micro 250V 40A N-Channel MOSFET TO-220F

CS40N25FA9R-G CR Micro 250V 40A N-Channel MOSFET TO-220F

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pCS40N25FA9R-G CR Micro 250V 40A N-Channel MOSFET TO-220F — Rds(on) 76 mΩ typ, Qg 47 nC./p
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    At a Glance
    • 250 V / 40 A continuous drain current, TO-220F package
    • Rds(on) 76 mΩ typ, 94 mΩ max at VGS = 10 V
    • Qg 47 nC and Ciss 2534 pF
    • N-channel, Planar process

    The CR Micro CS40N25FA9R-G is a 250 V 40 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 76 mΩ typical and 94 mΩ maximum at a 10 V gate drive; gate charge is 47 nC with 2534 pF input capacitance; threshold voltage spans 3 to 5 V.

    Key Specifications

    Drain-Source Voltage (VDS)250 V
    Continuous Drain Current (ID)40 A
    Rds(on) @ VGS = 10 V, typ.76 mΩ
    Rds(on) @ VGS = 10 V, max.94 mΩ
    Gate Threshold Voltage (VGS(th))3 – 5 V
    Total Gate Charge (Qg)47 nC
    Input Capacitance (Ciss)2534 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220F

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS55N25FA9R-G250V55A566963.63350TO-220F
    CS40N25FA9R-G250V40A7694472534TO-220F
    CS30N25FA9R250V30A10012037.11969TO-220F
    CS14N25FA9R250V14A20025022.71080TO-220F
    CS8N25FA9R250V8A36047012.8557TO-220F

    5 part numbers share the same 250 / TO-220F / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS40N25FA9R-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 250 V.

    Can the CS40N25FA9R-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS40N25FA9R-G?

    VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS40N25FA9R-G need?

    Qg is 47 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS40N25FA9R-G come in?

    TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 5 part numbers in this rating group?

    All 5 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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