CS40N50AKR-G CR Micro 500V 40A N-Channel MOSFET TO-247
CS40N50AKR-G CR Micro 500V 40A N-Channel MOSFET TO-247

CS40N50AKR-G CR Micro 500V 40A N-Channel MOSFET TO-247

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pCS40N50AKR-G CR Micro 500V 40A N-Channel MOSFET TO-247 — Rds(on) 82 mΩ typ./p
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    At a Glance
    • 500 V / 40 A continuous drain current, TO-247 package
    • Rds(on) 82 mΩ typ, 100 mΩ max at VGS = 10 V
    • Ciss 8473 pF
    • N-channel, Planar process

    The CR Micro CS40N50AKR-G is a 500 V 40 A N-channel MOSFET in a TO-247 package, built on the Planar process. On-resistance is 82 mΩ typical and 100 mΩ maximum at a 10 V gate drive; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)500 V
    Continuous Drain Current (ID)40 A
    Rds(on) @ VGS = 10 V, typ.82 mΩ
    Rds(on) @ VGS = 10 V, max.100 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Input Capacitance (Ciss)8473 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS40N50AKR-G500V40A821008473TO-247
    CS25N50AKR500V25A210270643487TO-247
    CS25N50AKRZ-G500V25A210270643487TO-247

    3 part numbers share the same 500 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS40N50AKR-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 500 V.

    Can the CS40N50AKR-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS40N50AKR-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    What package does the CS40N50AKR-G come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 3 part numbers in this rating group?

    All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

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