CS4N65A8RZ-G CR Micro 650V 4A N-Channel MOSFET TO-220
CS4N65A8RZ-G CR Micro 650V 4A N-Channel MOSFET TO-220

CS4N65A8RZ-G CR Micro 650V 4A N-Channel MOSFET TO-220

Share
pCS4N65A8RZ-G CR Micro 650V 4A N-Channel MOSFET TO-220 — Rds(on) 2400 mΩ typ, Qg 14.5 nC./p
    • Product Details
    • Download
    At a Glance
    • 650 V / 4 A continuous drain current, TO-220 package
    • Rds(on) 2400 mΩ typ, 2800 mΩ max at VGS = 10 V
    • Qg 14.5 nC and Ciss 610 pF
    • N-channel, Planar process

    The CR Micro CS4N65A8RZ-G is a 650 V 4 A N-channel MOSFET in a TO-220 package, built on the Planar process. On-resistance is 2400 mΩ typical and 2800 mΩ maximum at a 10 V gate drive; gate charge is 14.5 nC with 610 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)650 V
    Continuous Drain Current (ID)4 A
    Rds(on) @ VGS = 10 V, typ.2400 mΩ
    Rds(on) @ VGS = 10 V, max.2800 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)14.5 nC
    Input Capacitance (Ciss)610 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-220

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJT65N65G4FZ650V42A4665773450TO-220
    CRJT80N65G4FZ650V31A6880582550TO-220
    CRJT99N65G2650V32A8199702400TO-220
    CRJT99N65G2BF650V31A90103701900TO-220
    CRJT125N65G2BF650V25A103125521580TO-220
    CRJT140N65G2F650V24A110140461595TO-220
    CRJT180N65G2650V20A145180361114TO-220
    CRJT190N65G4F650V16A160190241030TO-220
    CRJT190N65G2BF650V19A165190361100TO-220
    CRJT190N65GCF650V20A185210411459TO-220
    CRJT290N65G2650V13A27030040750TO-220
    CRJT380N65G2650V11A33038020572TO-220
    CS16N65A8R650V16A51056050.52437TO-220
    CS12N65A8R650V12A660800401993TO-220
    CS10N65A8R650V10A8601000321642TO-220
    CS7N65A8R650V7A12001400241130TO-220
    CS7N65A8RC-G650V7A1200140023.31114TO-220
    CS4N65A8R650V4A2400280014.5610TO-220
    CS4N65A8RZ-G650V4A2400280014.5610TO-220

    19 part numbers share the same 650 / TO-220 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS4N65A8RZ-G an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 650 V.

    Can the CS4N65A8RZ-G be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS4N65A8RZ-G?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS4N65A8RZ-G need?

    Qg is 14.5 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS4N65A8RZ-G come in?

    TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 19 part numbers in this rating group?

    All 19 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

    Online message

    Shenzhen Gaorunxin Technology Co., Ltd

    Related Products