CS55N25A8R-G CR Micro 250V 55A N-Channel MOSFET TO-220
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- 250 V / 55 A continuous drain current, TO-220 package
- Rds(on) 56 mΩ typ, 69 mΩ max at VGS = 10 V
- Qg 63.6 nC and Ciss 3350 pF
- N-channel, Planar process
The CR Micro CS55N25A8R-G is a 250 V 55 A N-channel MOSFET in a TO-220 package, built on the Planar process. On-resistance is 56 mΩ typical and 69 mΩ maximum at a 10 V gate drive; gate charge is 63.6 nC with 3350 pF input capacitance; threshold voltage spans 3 to 5 V.
Key Specifications
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) | 55 A |
| Rds(on) @ VGS = 10 V, typ. | 56 mΩ |
| Rds(on) @ VGS = 10 V, max. | 69 mΩ |
| Gate Threshold Voltage (VGS(th)) | 3 – 5 V |
| Total Gate Charge (Qg) | 63.6 nC |
| Input Capacitance (Ciss) | 3350 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-220 |
Same-Rating Selection Table
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRST187N25N5Z | 250V | 90A | 16.3 | 18.7 | 62.7 | 4508 | TO-220 |
| CS55N25A8R-G | 250V | 55A | 56 | 69 | 63.6 | 3350 | TO-220 |
| CS40N25A8R | 250V | 40A | 76 | 94 | 47 | 2534 | TO-220 |
| CS40N25A8RZ-G | 250V | 40A | 76 | 94 | 47 | 2534 | TO-220 |
| CS30N25A8R | 250V | 30A | 100 | 120 | 37.1 | 1969 | TO-220 |
| CS14N25A8R | 250V | 14A | 200 | 250 | 22.7 | 1080 | TO-220 |
| CS8N25A8R-G | 250V | 8A | 360 | 470 | 12.8 | 557 | TO-220 |
7 part numbers share the same 250 / TO-220 / N rating — sorted by rds(on) typ.
Process Technology
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Applications
Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS55N25A8R-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 250 V.
Can the CS55N25A8R-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS55N25A8R-G?
VGS(th) is specified between 3 and 5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS55N25A8R-G need?
Qg is 63.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS55N25A8R-G come in?
TO-220. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 7 part numbers in this rating group?
All 7 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
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