CS5N06AE-1 CR Micro 60V 5A N-Channel MOSFET SOP-8
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- 60 V / 5 A continuous drain current, SOP-8 package
- Rds(on) 36 mΩ typ, 45 mΩ max at VGS = 10 V
- Qg 11.2 nC and Ciss 504 pF
- N-channel, Trench process
The CR Micro CS5N06AE-1 is a 60 V 5 A N-channel MOSFET in a SOP-8 package, built on the Trench process. On-resistance is 36 mΩ typical and 45 mΩ maximum at a 10 V gate drive; 53 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 11.2 nC with 504 pF input capacitance; threshold voltage spans 1.7 to 2.8 V.
Key Specifications
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 5 A |
| Rds(on) @ VGS = 10 V, typ. | 36 mΩ |
| Rds(on) @ VGS = 10 V, max. | 45 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 53 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 66 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.7 – 2.8 V |
| Total Gate Charge (Qg) | 11.2 nC |
| Input Capacitance (Ciss) | 504 pF |
| Channel Polarity | N-channel |
| Process Family | Trench |
| Package | SOP-8 |
Same-Rating Selection Table
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRSE095N06L2 | 60V | 12A | 8 | 9.6 | 18 | 1062 | SOP-8 |
| CRSE095N06L2A | 60V | 12A | 8 | 9.6 | 18 | 1062 | SOP-8 |
| CS5N06AE-1 | 60V | 5A | 36 | 45 | 11.2 | 504 | SOP-8 |
3 part numbers share the same 60 / SOP-8 / N rating — sorted by rds(on) typ.
Process Technology
Trench — the gate is etched vertically into the drift region, multiplying channel width per unit area. Lowest Rds(on) in the sub-200 V range; the trade-off is higher Qg and a more fragile body diode under hard commutation.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the CS5N06AE-1 an N-channel or P-channel device?
It is N-channel. The drain-source rating is 60 V.
Can the CS5N06AE-1 be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 53 mΩ typical and 66 mΩ maximum.
What is the gate threshold voltage of the CS5N06AE-1?
VGS(th) is specified between 1.7 and 2.8 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS5N06AE-1 need?
Qg is 11.2 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS5N06AE-1 come in?
SOP-8. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 3 part numbers in this rating group?
All 3 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
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