CS60N20AKR CR Micro 200V 60A N-Channel MOSFET TO-247
CS60N20AKR CR Micro 200V 60A N-Channel MOSFET TO-247

CS60N20AKR CR Micro 200V 60A N-Channel MOSFET TO-247

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pCS60N20AKR CR Micro 200V 60A N-Channel MOSFET TO-247 — Rds(on) 39 mΩ typ, Qg 56.9 nC./p
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    At a Glance
    • 200 V / 60 A continuous drain current, TO-247 package
    • Rds(on) 39 mΩ typ, 46 mΩ max at VGS = 10 V
    • Qg 56.9 nC and Ciss 3308 pF
    • N-channel, Planar process

    The CR Micro CS60N20AKR is a 200 V 60 A N-channel MOSFET in a TO-247 package, built on the Planar process. On-resistance is 39 mΩ typical and 46 mΩ maximum at a 10 V gate drive; gate charge is 56.9 nC with 3308 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)200 V
    Continuous Drain Current (ID)60 A
    Rds(on) @ VGS = 10 V, typ.39 mΩ
    Rds(on) @ VGS = 10 V, max.46 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)56.9 nC
    Input Capacitance (Ciss)3308 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-247

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRSQ088N20N3Z200V140A7.58.883.95644TO-247
    CRSQ113N20N200V110A8.810.6745267.7TO-247
    CRSQ113N20NZ200V110A8.810.6745268TO-247
    CRSQ113N20NZ-Q200V115A8.810.6745268TO-247
    CRSQ155N20N3200V80A1315.556.23602TO-247
    CRSQ190N20N3200V65A16.51940.72746TO-247
    CS100N20AKR-G200V100A18236929TO-247
    CS70N20AKR200V70A29.53587.44748TO-247
    CS60N20AKR200V60A394656.93308TO-247

    9 part numbers share the same 200 / TO-247 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Telecom and server DC-DC stages, Class-D audio, PoE interfaces, and 48 V motor drive.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS60N20AKR an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 200 V.

    Can the CS60N20AKR be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS60N20AKR?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS60N20AKR need?

    Qg is 56.9 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS60N20AKR come in?

    TO-247. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 9 part numbers in this rating group?

    All 9 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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