CS7N60A4R CR Micro 600V 7A N-Channel MOSFET TO-252
CS7N60A4R CR Micro 600V 7A N-Channel MOSFET TO-252

CS7N60A4R CR Micro 600V 7A N-Channel MOSFET TO-252

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pCS7N60A4R CR Micro 600V 7A N-Channel MOSFET TO-252 — Rds(on) 1000 mΩ typ, Qg 24 nC./p
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    At a Glance
    • 600 V / 7 A continuous drain current, TO-252 package
    • Rds(on) 1000 mΩ typ, 1300 mΩ max at VGS = 10 V
    • Qg 24 nC and Ciss 1121 pF
    • N-channel, Planar process

    The CR Micro CS7N60A4R is a 600 V 7 A N-channel MOSFET in a TO-252 package, built on the Planar process. On-resistance is 1000 mΩ typical and 1300 mΩ maximum at a 10 V gate drive; gate charge is 24 nC with 1121 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)600 V
    Continuous Drain Current (ID)7 A
    Rds(on) @ VGS = 10 V, typ.1000 mΩ
    Rds(on) @ VGS = 10 V, max.1300 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)24 nC
    Input Capacitance (Ciss)1121 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CRJD290N60G4EM600V10A27531012600TO-252
    CRJD360N60G2E600V9A31536017500TO-252
    CRJD500N60G2BF600V8A42050015.5360TO-252
    CRJD600N60G2E600V7A53060010.8317TO-252
    CS6N60A4D600V6A1000130025950TO-252
    CS7N60A4R600V7A10001300241121TO-252
    CS7N60A4RC-G600V7A1000130025.31111TO-252
    CS6N60A4H600V6A1400170019.5720TO-252
    CS6R60A4RDP-G600V6A1600200020864TO-252
    CS4N60A4R600V4A2100250014.5590TO-252
    CS4N60A4RC-G600V4A2100250014.7572TO-252
    CS4R60A4RDP-G600V4A2500300015.3608TO-252
    CS2N60A4R600V2A360045009.5335TO-252
    CS2N60A4RZ-G600V2A360045009.5335TO-252
    CS2R60A4RP-G600V2A5000550010.6344TO-252
    CS1N60A4H600V0.8A1100015000492TO-252

    16 part numbers share the same 600 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS7N60A4R an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 600 V.

    Can the CS7N60A4R be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS7N60A4R?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS7N60A4R need?

    Qg is 24 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS7N60A4R come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 16 part numbers in this rating group?

    All 16 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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