
The CR Micro CS7N80FA9RZ-G is a 800 V 7 A N-channel MOSFET in a TO-220F package, built on the Planar process. On-resistance is 1500 mΩ typical and 1800 mΩ maximum at a 10 V gate drive; gate charge is 33.9 nC with 1443 pF input capacitance; threshold voltage spans 2 to 4 V.
| Drain-Source Voltage (VDS) | 800 V |
| Continuous Drain Current (ID) | 7 A |
| Rds(on) @ VGS = 10 V, typ. | 1500 mΩ |
| Rds(on) @ VGS = 10 V, max. | 1800 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 33.9 nC |
| Input Capacitance (Ciss) | 1443 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-220F |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CRJF180N80G2E | 800V | 25A | 145 | 180 | 53 | 2056 | TO-220F |
| CRJF280N80G2E | 800V | 17A | 240 | 280 | 36.7 | 1368 | TO-220F |
| CRJF450N80G2 | 800V | 10A | 350 | 450 | 25 | 861 | TO-220F |
| CRJF600N80G2E | 800V | 8A | 490 | 600 | 18.3 | 600 | TO-220F |
| CRJF750N80G2E | 800V | 7A | 650 | 750 | TO-220F | ||
| CRJF900N80G2E | 800V | 6A | 700 | 900 | TO-220F | ||
| CS10N80FA9D | 800V | 10A | 720 | 900 | 65 | 2900 | TO-220F |
| CS12N80FA9RD | 800V | 12A | 750 | 900 | 51.1 | 2764 | TO-220F |
| CS8N80FA9D | 800V | 8A | 1000 | 1250 | 49 | 2150 | TO-220F |
| CRJF1K4N80G2E | 800V | 4A | 1100 | 1400 | TO-220F | ||
| CS7N80FA9R-G | 800V | 7A | 1500 | 1800 | 33.9 | 1443 | TO-220F |
| CS7N80FA9RZ-G | 800V | 7A | 1500 | 1800 | 33.9 | 1443 | TO-220F |
| CS6N80FA9R | 800V | 6A | 1800 | 2200 | 28.4 | 1556 | TO-220F |
| CS3N80FA9R-G | 800V | 3A | 3700 | 4800 | 17.3 | 567 | TO-220F |
14 part numbers share the same 800 / TO-220F / N rating — sorted by rds(on) typ.
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
High-voltage offline supplies, active clamp topologies, and single-stage PFC.
Is the CS7N80FA9RZ-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 800 V.
Can the CS7N80FA9RZ-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS7N80FA9RZ-G?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS7N80FA9RZ-G need?
Qg is 33.9 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS7N80FA9RZ-G come in?
TO-220F. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 14 part numbers in this rating group?
All 14 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd