CS8N50A4R CR Micro 500V 8A N-Channel MOSFET TO-252
CS8N50A4R CR Micro 500V 8A N-Channel MOSFET TO-252

CS8N50A4R CR Micro 500V 8A N-Channel MOSFET TO-252

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pCS8N50A4R CR Micro 500V 8A N-Channel MOSFET TO-252 — Rds(on) 700 mΩ typ, Qg 24 nC./p
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    At a Glance
    • 500 V / 8 A continuous drain current, TO-252 package
    • Rds(on) 700 mΩ typ, 900 mΩ max at VGS = 10 V
    • Qg 24 nC and Ciss 1136 pF
    • N-channel, Planar process

    The CR Micro CS8N50A4R is a 500 V 8 A N-channel MOSFET in a TO-252 package, built on the Planar process. On-resistance is 700 mΩ typical and 900 mΩ maximum at a 10 V gate drive; gate charge is 24 nC with 1136 pF input capacitance; threshold voltage spans 2 to 4 V.

    Key Specifications

    Drain-Source Voltage (VDS)500 V
    Continuous Drain Current (ID)8 A
    Rds(on) @ VGS = 10 V, typ.700 mΩ
    Rds(on) @ VGS = 10 V, max.900 mΩ
    Gate Threshold Voltage (VGS(th))2 – 4 V
    Total Gate Charge (Qg)24 nC
    Input Capacitance (Ciss)1136 pF
    Channel PolarityN-channel
    Process FamilyPlanar
    PackageTO-252

    Same-Rating Selection Table

    Part NumberVDSIDRds(on) typRds(on) maxQgCissPackage
    CS8N50A4R500V8A700900241136TO-252
    CS8N50A4RC-G500V8A70090023.61140TO-252
    CS7R50A4RDP-G500V7A1100140019.7860TO-252
    CS830A4RD500V5A1250150014.5540TO-252
    CS5N50A4R500V5A1300150012.6584TO-252
    CS5N50A4RC-G500V5A1300150014590TO-252
    CS5R50C4RDP-G500V5A1600200014.9583TO-252
    CS3N50A4R500V3A250030008.8350TO-252
    CS3R50A4RP-G500V3A300035007.3340TO-252

    9 part numbers share the same 500 / TO-252 / N rating — sorted by rds(on) typ.

    Process Technology

    Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.

    Applications

    Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.

    Selection Notes

    • Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
    • If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
    • For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
    • The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.

    Common Questions

    Is the CS8N50A4R an N-channel or P-channel device?

    It is N-channel. The drain-source rating is 500 V.

    Can the CS8N50A4R be driven at 4.5 V?

    No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.

    What is the gate threshold voltage of the CS8N50A4R?

    VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.

    How much gate charge does the CS8N50A4R need?

    Qg is 24 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.

    What package does the CS8N50A4R come in?

    TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.

    How do I choose between the 9 part numbers in this rating group?

    All 9 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.

    Shenzhen Gaorunxin Technology Co., Ltd

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