
The CR Micro CS8N50A4RC-G is a 500 V 8 A N-channel MOSFET in a TO-252 package, built on the Planar process. On-resistance is 700 mΩ typical and 900 mΩ maximum at a 10 V gate drive; gate charge is 23.6 nC with 1140 pF input capacitance; threshold voltage spans 2 to 4 V.
| Drain-Source Voltage (VDS) | 500 V |
| Continuous Drain Current (ID) | 8 A |
| Rds(on) @ VGS = 10 V, typ. | 700 mΩ |
| Rds(on) @ VGS = 10 V, max. | 900 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2 – 4 V |
| Total Gate Charge (Qg) | 23.6 nC |
| Input Capacitance (Ciss) | 1140 pF |
| Channel Polarity | N-channel |
| Process Family | Planar |
| Package | TO-252 |
| Part Number | VDS | ID | Rds(on) typ | Rds(on) max | Qg | Ciss | Package |
|---|---|---|---|---|---|---|---|
| CS8N50A4R | 500V | 8A | 700 | 900 | 24 | 1136 | TO-252 |
| CS8N50A4RC-G | 500V | 8A | 700 | 900 | 23.6 | 1140 | TO-252 |
| CS7R50A4RDP-G | 500V | 7A | 1100 | 1400 | 19.7 | 860 | TO-252 |
| CS830A4RD | 500V | 5A | 1250 | 1500 | 14.5 | 540 | TO-252 |
| CS5N50A4R | 500V | 5A | 1300 | 1500 | 12.6 | 584 | TO-252 |
| CS5N50A4RC-G | 500V | 5A | 1300 | 1500 | 14 | 590 | TO-252 |
| CS5R50C4RDP-G | 500V | 5A | 1600 | 2000 | 14.9 | 583 | TO-252 |
| CS3N50A4R | 500V | 3A | 2500 | 3000 | 8.8 | 350 | TO-252 |
| CS3R50A4RP-G | 500V | 3A | 3000 | 3500 | 7.3 | 340 | TO-252 |
9 part numbers share the same 500 / TO-252 / N rating — sorted by rds(on) typ.
Planar — the gate sits flat on the die surface. Lower channel density than trench designs, but a wider safe operating area, stronger avalanche withstand and simpler gate drive. Preferred for high-voltage and rugged industrial loads where robustness outranks on-resistance.
Active PFC, server and telecom rectifiers, and half-bridge or full-bridge DC-DC with 650 V bus.
Is the CS8N50A4RC-G an N-channel or P-channel device?
It is N-channel. The drain-source rating is 500 V.
Can the CS8N50A4RC-G be driven at 4.5 V?
No 4.5 V on-resistance figure is published for this part. It is characterised at 10 V gate drive, so use a driver that reaches 10 V.
What is the gate threshold voltage of the CS8N50A4RC-G?
VGS(th) is specified between 2 and 4 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the CS8N50A4RC-G need?
Qg is 23.6 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the CS8N50A4RC-G come in?
TO-252. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
How do I choose between the 9 part numbers in this rating group?
All 9 share the same voltage and package class. Sort by on-resistance first, then check gate charge: the lowest Rds(on) part is not automatically the best choice if the stage switches at high frequency. The table above lists them in ascending Rds(on) order.
Shenzhen Gaorunxin Technology Co., Ltd
Shenzhen Gaorunxin Technology Co., Ltd