HGQ065NE4A CR Micro 45V 60A N-Channel MOSFET PDFN5×6
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- 45 V / 60 A continuous drain current, PDFN5×6 package
- Rds(on) 5.2 mΩ typ, 6.5 mΩ max at VGS = 10 V
- Qg 24 nC and Ciss 1156 pF
- N-channel, SGT process
The CR Micro HGQ065NE4A is a 45 V 60 A N-channel MOSFET in a PDFN5×6 package, built on the SGT process. On-resistance is 5.2 mΩ typical and 6.5 mΩ maximum at a 10 V gate drive; 7.6 mΩ typical at 4.5 V, so it also works from a logic-level driver; gate charge is 24 nC with 1156 pF input capacitance; threshold voltage spans 1 to 2.5 V.
Key Specifications
| Drain-Source Voltage (VDS) | 45 V |
| Continuous Drain Current (ID) | 60 A |
| Rds(on) @ VGS = 10 V, typ. | 5.2 mΩ |
| Rds(on) @ VGS = 10 V, max. | 6.5 mΩ |
| Rds(on) @ VGS = 4.5 V, typ. | 7.6 mΩ |
| Rds(on) @ VGS = 4.5 V, max. | 9.8 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1 – 2.5 V |
| Total Gate Charge (Qg) | 24 nC |
| Input Capacitance (Ciss) | 1156 pF |
| Channel Polarity | N-channel |
| Process Family | SGT |
| Package | PDFN5×6 |
Process Technology
SGT (Shielded Gate Trench) — a trench gate with a grounded shield electrode beneath it. The shield cuts the gate-drain capacitance, so Qg and Crss drop sharply against a conventional trench at the same Rds(on). This is the workhorse process for 30–200 V and for 600–650 V high-frequency switching.
Applications
Low-voltage DC-DC converters, load switches, battery protection, and brushed or stepper motor drive.
Selection Notes
- Rds(on) rises with junction temperature. Size the heatsink against the hot value given in the datasheet, not the 25 °C number in the table above.
- If the gate is driven below 10 V, check the 4.5 V Rds(on) line — parts without that rating are not characterised for logic-level drive.
- For high-frequency stages compare Qg and Ciss against the Rds(on) gain. A part one bin lower in Rds(on) often costs more switching loss than it saves in conduction.
- The body diode recovery of low-Rds(on) parts can be severe in bridge topologies. Verify dv/dt and dead time against the datasheet before dropping it into a half bridge.
Common Questions
Is the HGQ065NE4A an N-channel or P-channel device?
It is N-channel. The drain-source rating is 45 V.
Can the HGQ065NE4A be driven from a 4.5 V logic-level gate signal?
Yes. The datasheet characterises Rds(on) at 4.5 V: 7.6 mΩ typical and 9.8 mΩ maximum.
What is the gate threshold voltage of the HGQ065NE4A?
VGS(th) is specified between 1 and 2.5 V. Below the lower figure the part is off; above the upper figure it is fully on at the rated current.
How much gate charge does the HGQ065NE4A need?
Qg is 24 nC. Size the driver against that figure at your switching frequency, and add the gate loop loss to the total dissipation budget.
What package does the HGQ065NE4A come in?
PDFN5×6. Check the datasheet mechanical drawing for lead spacing and thermal pad dimensions before laying out the footprint.
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